G.A. Hirata, J. McKittrick, T. Cheeks, J.M. Siqueiros, J.A. Diaz, O. Contreras, and O.A. Lopez, "Synthesis and Optoelectronic Characterization of Gallium Doped Zinc Oxide Transparent Electrodes," Thin Solid Films, 288 [1-2] 29-31 (1996).

In this work we report on pulsed laser deposition of gallium-doped zinc oxide (ZnO:Ga) transparent-conducting thin films grown on glass at different substrate temperatures. A widening in the optical bandgap and a good gallium-doping efficiency were observed in the films when the substrate was raised from 150°C to 300°C, as determined from optical and electrical measurements. X-ray diffraction measurements revealed that the films grow preferentially oriented in the [002] crystallographic direction of the ZnO grains. The crystallinity of the films was also found to be strongly dependent on the substrate temperature. The ZnO:Ga transparent films had excellent transmittance (85%) in the visible spectrum and a low electrical resistivity value (7 x 10^-4 W-cm) in 200 nm thickness samples deposited on glass by laser ablation at 300°C.